GATE 2013 ECE In a MOSFET operating in the saturation…

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GATE 2013 ECE
In a MOSFET operating in the saturation region, the channel length modulation effect causes

(A) an increase in the gate-source capacitance
(B) a decrease in the Transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance

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