GATE 2012 ECE A silicon bar is doped with donor impurities…

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GATE 2012 ECE
A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms / cm3. Given the intrinsic  carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

(A) n0 = 1.5 x 1016 cm-3, p0 = 1.5 x 105 cm-3
(B) n0 = 1.5 x 1010 cm-3, p0= 1.5 x 1015 cm-3
(C) n0 = 2.25 x 1015 cm-3, p0 = 1.5 x 1010 cm-3
(D) n0 = 2.25 x 1015 cm-3, p0 = 1 x 105 cm-3

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